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css essay free download – Free essays on how to master the css html language for school and college * Fast delivery and 24/7 customer support – term paper writing service at professional academic helpThe present invention relates to a semiconductor device and a method of manufacturing the same.
In view of the current demand for highly integrated and large-capacity semiconductor devices, various dielectric thin film are under development in the art. For example, silicon oxide films have generally been known as a silicon oxide film forming material. However, the silicon oxide film has weak film strength and unstable film quality due to its low physical film thickness. In contrast, a nitride film generally has a good film strength and therefore is a promising material for a dielectric thin film.
The nitride film can be formed using various film forming processes including a chemical vapor deposition (CVD) process, a sputtering process, and the like. In particular, the CVD process has been in wide use, because the film forming process can be conducted at a relatively low temperature. The CVD process includes a silane-based thermal CVD process, a metal-based catalytic CVD process, a plasma CVD process, and the like. For example, an SiH4-based thermal CVD process has been in use as the sputtering process.
The reduction of the pressure in the CVD process has been under study in order to reduce the film forming temperature and to reduce the generation of dusts. The reduction of the pressure in the CVD process allows a decrease in the allowable film forming temperature.
Japanese Unexamined Patent Publication No. 5-266025 discloses the need for the reduction of the film forming pressure in the CVD process. This disclosure suggests that the reduction of the pressure results in the generation of SiNx as a by-product. However, no consideration is given to the effect of the by-product on the reliability of the formed film.
Japanese Unexamined Patent Publication No
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