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The present invention relates to a CVD (Chemical Vapor Deposition) apparatus, and in particular, to an improvement in a CVD apparatus of this type.
As semiconductor devices have recently been micronized, characteristics of interconnection materials (e.g., Al or Al alloy) have been improved by sputtering techniques and vacuum deposition techniques using plasma. However, the vacuum deposition techniques are not suited for the manufacture of semiconductor devices, since they can provide only a poorly planarized surface in the formation of interconnections.
On the other hand, the sputtering techniques are unsuitable for forming very small interconnections because the deposition may not be uniformly performed.
Accordingly, a CVD apparatus is widely used for forming a thin film of interconnections.
FIGS. 2 and 3 show an example of a conventional CVD apparatus, which is shown in U.S. Pat. No. 4,761,337. This CVD apparatus has a reaction chamber 1, through which a substrate W to be processed is moved in a sub-process chamber 3 through a gate valve 2, while carrier gas 6 is introduced into the sub-process chamber 3 through a carrier gas inlet port 5, through which the carrier gas 6 is admitted into the reaction chamber 1. The carrier gas is introduced through a line 4, for example, formed by joining a line 7 and a line 8.
The line 7 is formed by disposing a tip 14 for a shower head or the like at a rear end of a discharge tube 12 on a carrier gas introducing line 11 which is formed by joining the line 8 and a branch line 9. The carrier gas 6 is introduced through the tip 14, while the discharge tube 12 is connected to a gas supply means 13 for generating plasma, which is incorporated in the discharge tube 12.
The carrier gas 6 is introduced through a carrier gas inlet port 15 formed in the line 8, and is discharged through a carrier gas outlet port 16. The sub-process chamber 3 is exhausted by a vacuum exhaust system 7.
With the conventional CVD apparatus, a high degree of vacuum is maintained in the reaction chamber 1, and, accordingly, the carrier gas 6 is introduced at a very low pressure.
On the other hand, the pressure of the carrier gas 6 is controlled in the range of from 10 to several hundreds Pascals (Pa), and the pressure of the carrier gas 6 in the sub-process chamber 3 must be set to a level of
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